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Date : 1989-04-01
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Ionizing Radiation Effects in MOS Devices and Circuits T ~ From the Publisher The first comprehensive overview describing the effects of ionizing radiation on MOS devices as well as how to design fabricate and test integrated circuits intended for use in a radiation environment Also addresses processinduced radiation effects in the fabrication of highdensity circuits
Ionizing Radiation Effects in MOS Devices and Circuits Wiley ~ The first comprehensive overview describing the effects of ionizing radiation on MOS devices as well as how to design fabricate and test integrated circuits intended for use in a radiation environment Also addresses processinduced radiation effects in the fabrication of highdensity circuits
Ionizing radiation effects in MOS devices and circuits ~ When exposed to ionizing gamma radiation complementary MOS CMOS circuits exhibit threshold voltage shifts degradation in channel mobility and excessive device leakage which eventually lead to abrupt device failure
Ionizing Radiation Effects in MOS Devices and Circuits ~ The first comprehensive overview describing the effects of ionizing radiation on MOS devices as well as how to design fabricate and test integrated circuits intended for use in a radiation environment Also addresses processinduced radiation effects in the fabrication of highdensity circuits
Ionizing radiation effects in MOS devices and circuits ~ Ionizing radiation effects in MOS devices and circuits inproceedingsMa1989IonizingRE titleIonizing radiation effects in MOS devices and circuits authorT P Ma and Paul V Dressendorfer year1989
Ionizing radiation effects in MOS devices and circuits ~ The first comprehensive overview describing the effects of ionizing radiation on MOS devices as well as how to design fabricate and test integrated circuits intended for use in a radiation Also addresses processinduced radiation effects in the fabrication of highdensity circuits
Radiation effects and hardening of MOS technology Devices ~ Total ionizing dose radiation effects on the electrical properties of metaloxidesemiconductor devices and integrated circuits are complex in nature and have changed much during decades of device evolution These effects are caused by radiationinduced charge buildup in oxide and interfacial regions
Total ionizing dose effects in MOS oxides and devices ~ Total Ionizing Dose Effects in MOS Oxides and Devices T R Oldham Fellow IEEE and F B McLean Fellow IEEE Abstract— This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides including charge generation transport trapping and detrapping and interface trap formation Device and circuit effects are also discussed briefly
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